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VisIC samples first 1200V GaN power module

Retrieved on: 2018-02-06 05:11:11

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<div>The new VisIC module is based on <b>TSMC's</b> 650V GaN-on-silicon process, which provides high yield and fast ramp-up capabilities, while VisIC's GaN high-electron-mobility transistor (HEMT) design provides a switching time below 10ns. With 1200V ratings, the GaN module offers typical on-resistance of ...</div>

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